Repositorio Institucional de la Universidad de Oviedo

A physics-oriented analysis of sic trench mosfets under gate switching stress test conditions

Author:

Roig, J.; Krishna, R.; Jiménez Guerra, C.; Gómez Gómez, Alexis Anselmo; García Meré, Juan Ramón; Rodríguez Alonso, Alberto; Rodríguez Méndez, Juan

Publication date:

2024

Publisher version:

http://dx.doi.org/10.1109/ISPSD59661.2024.10579599

Descripción física:

p. 100-103

URI:

https://hdl.handle.net/10651/77593

ISBN:

979-835039482-5

ISSN:

1063-6854

DOI:

10.1109/ISPSD59661.2024.10579599