A physics-oriented analysis of sic trench mosfets under gate switching stress test conditions

dc.contributor.author	Roig, J.
dc.contributor.author	Krishna, R.
dc.contributor.author	Jiménez Guerra, C.
dc.contributor.author	Gómez Gómez, Alexis Anselmo
dc.contributor.author	García Meré, Juan Ramón
dc.contributor.author	Rodríguez Alonso, Alberto
dc.contributor.author	Rodríguez Méndez, Juan
dc.date.accessioned	2025-03-14T08:50:50Z
dc.date.available	2025-03-14T08:50:50Z
dc.date.issued	2024
dc.identifier.isbn	979-835039482-5
dc.identifier.issn	1063-6854
dc.identifier.uri	https://hdl.handle.net/10651/77593
dc.format.extent	p. 100-103
dc.language.iso	eng
dc.relation.ispartof	Proceedings of the International Symposium on Power Semiconductor Devices and ICS
dc.rights	©,
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85199200034&doi=10.1109%2fISPSD59661.2024.10579599&partnerID=40&md5=90c53eb515dd6eff858a994f0007682d
dc.title	A physics-oriented analysis of sic trench mosfets under gate switching stress test conditions
dc.type	conference output
dc.identifier.doi	10.1109/ISPSD59661.2024.10579599
dc.relation.publisherversion	http://dx.doi.org/10.1109/ISPSD59661.2024.10579599

Ficheros en el ítem

Ficheros	Tamaño	Formato	Ver
No hay ficheros asociados a este ítem.