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Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme
dc.contributor.author | García García, Jorge | |
dc.contributor.author | Gurpinar, E. | |
dc.contributor.author | Castellazi, A. | |
dc.contributor.author | García Fernández, Pablo | |
dc.date.accessioned | 2018-04-24T09:39:31Z | |
dc.date.available | 2018-04-24T09:39:31Z | |
dc.date.issued | 2017 | |
dc.identifier.isbn | 978-1-5090-2998-3 | |
dc.identifier.uri | http://hdl.handle.net/10651/46678 | |
dc.description | IEEE Energy Conversion Congress and Exposition (9th. 2017. Cincinnati) | |
dc.description.sponsorship | This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grant ENE2016-77919, Project ”Conciliator” (Innovation Development and Research Office-MEC), and by the European Union through ERFD Structural Funds (FEDER). | |
dc.format.extent | p. 5101-5106 | |
dc.language.iso | eng | |
dc.relation.ispartof | 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017 | |
dc.rights | © 2017 IEEE | |
dc.source | Scopus | |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85041294348&doi=10.1109%2fECCE.2017.8096859&partnerID=40&md5=9fe397061d1cbc8ad344922db0f3435e | |
dc.title | Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme | |
dc.type | conference output | spa |
dc.identifier.doi | 10.1109/ECCE.2017.8096859 | |
dc.relation.projectID | PRX15/00594 | |
dc.relation.projectID | MECD/ENE2016-77919 | |
dc.relation.projectID | FEDER | |
dc.relation.publisherversion | http://dx.doi.org/10.1109/ECCE.2017.8096859 |
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