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Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme

Author:
García García, JorgeUniovi authority; Gurpinar, E.; Castellazi, A.; García Fernández, PabloUniovi authority
Publication date:
2017
Publisher version:
http://dx.doi.org/10.1109/ECCE.2017.8096859
Descripción física:
p. 5101-5106
Description:

IEEE Energy Conversion Congress and Exposition (9th. 2017. Cincinnati)

URI:
http://hdl.handle.net/10651/46678
ISBN:
978-1-5090-2998-3
DOI:
10.1109/ECCE.2017.8096859
Patrocinado por:

This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grant ENE2016-77919, Project ”Conciliator” (Innovation Development and Research Office-MEC), and by the European Union through ERFD Structural Funds (FEDER).

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