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Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme

dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorGurpinar, E.
dc.contributor.authorCastellazi, A.
dc.contributor.authorGarcía Fernández, Pablo 
dc.date.accessioned2018-04-24T09:39:31Z
dc.date.available2018-04-24T09:39:31Z
dc.date.issued2017
dc.identifier.isbn978-1-5090-2998-3
dc.identifier.urihttp://hdl.handle.net/10651/46678
dc.descriptionIEEE Energy Conversion Congress and Exposition (9th. 2017. Cincinnati)
dc.description.sponsorshipThis work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grant ENE2016-77919, Project ”Conciliator” (Innovation Development and Research Office-MEC), and by the European Union through ERFD Structural Funds (FEDER).
dc.format.extentp. 5101-5106
dc.language.isoeng
dc.relation.ispartof2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
dc.rights© 2017 IEEE
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85041294348&doi=10.1109%2fECCE.2017.8096859&partnerID=40&md5=9fe397061d1cbc8ad344922db0f3435e
dc.titleSelf-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.identifier.doi10.1109/ECCE.2017.8096859
dc.type.dcmitext
dc.relation.projectIDPRX15/00594
dc.relation.projectIDMECD/ENE2016-77919
dc.relation.projectIDFEDER
dc.relation.publisherversionhttp://dx.doi.org/10.1109/ECCE.2017.8096859


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