Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme
Descripción física:p. 5101-5106
IEEE Energy Conversion Congress and Exposition (9th. 2017. Cincinnati)
This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grant ENE2016-77919, Project ”Conciliator” (Innovation Development and Research Office-MEC), and by the European Union through ERFD Structural Funds (FEDER).