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Self-assembling of Ge quantum dots in an alumina matrix

Author:
Buljan, Maja; Pinto, Sara R.C.; Rolo, Anabela G.; Martín-Sánchez, Javier; Gomes, María J.M.; Grenzer, J.; Mücklich, A.; Bernstorff, Sigrid; Holý, V.
Publication date:
2010-12-03
Publisher version:
http://dx.doi.org/10.1103/PhysRevB.82.235407
Citación:
Physical Review B, 82, 235407 (2010); doi:10.1103/PhysRevB.82.235407
Abstract:

In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered three-dimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size less than 4.0 nm, have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion-mediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.

In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered three-dimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size less than 4.0 nm, have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion-mediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.

URI:
https://hdl.handle.net/10651/76257
DOI:
10.1103/PhysRevB.82.235407
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