Repositorio Institucional de la Universidad de Oviedo

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Lab-based XRD measurements were supported by the European Union’s Horizon Europe research and innovation program under Grant Agreement No. 101039986– “Highly Energy-Efficient Resistive Switching in Defect- and Strain- Engineered Mott Insulators for Neuromorphic Computing Applications.” J.d.V. was supported by the Spanish Ministry of Science through a Ramón y Cajal Fellowship (Grant No. RYC2021-030952-I) and by the Asturias FICYT under Grant No. AYUD/2021/51185 with the support of FEDER funds.