Junction Temperature Model and Degradation Effect in IGBT Multichip Power Modules

dc.contributor.author	González Hernando, Fernando
dc.contributor.author	San Sebastián, Jon
dc.contributor.author	García Bediaga, Asier
dc.contributor.author	Arias Pérez de Azpeitia, Manuel
dc.contributor.author	Rujas, A.
dc.date.accessioned	2020-06-26T07:57:05Z
dc.date.available	2020-06-26T07:57:05Z
dc.date.issued	2019
dc.identifier.isbn	9781728103952
dc.identifier.uri	http://hdl.handle.net/10651/55236
dc.description	Annual Energy Conversion Congress and Exposition, ECCE (11th. 2019. Baltimore, USA)
dc.format.extent	p. 8911889-2962
dc.language.iso	eng
dc.relation.ispartof	2019 IEEE Energy Conversion Congress and Exposition (ECCE)
dc.rights	© 2019 IEEE
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85076758080&doi=10.1109%2fECCE.2019.8911889&partnerID=40&md5=03548bae317465a8d937d839e32eb8ae
dc.title	Junction Temperature Model and Degradation Effect in IGBT Multichip Power Modules
dc.type	conference output	spa
dc.identifier.doi	10.1109/ECCE.2019.8911889
dc.relation.publisherversion	http://dx.doi.org/10.1109/ECCE.2019.8911889

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