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Junction Temperature Model and Degradation Effect in IGBT Multichip Power Modules

dc.contributor.authorGonzález Hernando, Fernando
dc.contributor.authorSan Sebastián, Jon
dc.contributor.authorGarcía Bediaga, Asier
dc.contributor.authorArias Pérez de Azpeitia, Manuel 
dc.contributor.authorRujas, A.
dc.date.accessioned2020-06-26T07:57:05Z
dc.date.available2020-06-26T07:57:05Z
dc.date.issued2019
dc.identifier.isbn9781728103952
dc.identifier.urihttp://hdl.handle.net/10651/55236
dc.descriptionAnnual Energy Conversion Congress and Exposition, ECCE (11th. 2019. Baltimore, USA)
dc.format.extentp. 8911889-2962
dc.language.isoeng
dc.relation.ispartof2019 IEEE Energy Conversion Congress and Exposition (ECCE)
dc.rights© 2019 IEEE
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85076758080&doi=10.1109%2fECCE.2019.8911889&partnerID=40&md5=03548bae317465a8d937d839e32eb8ae
dc.titleJunction Temperature Model and Degradation Effect in IGBT Multichip Power Modules
dc.typeconference outputspa
dc.identifier.doi10.1109/ECCE.2019.8911889
dc.relation.publisherversionhttp://dx.doi.org/10.1109/ECCE.2019.8911889


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