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Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

dc.contributor.authorAvila, Ander
dc.contributor.authorGarcía Bediaga, Asier
dc.contributor.authorOñederra, O.
dc.contributor.authorRujas, A.
dc.contributor.authorRodríguez Alonso, Alberto 
dc.date.accessioned2018-06-07T08:56:37Z
dc.date.available2018-06-07T08:56:37Z
dc.date.issued2017
dc.identifier.isbn9789075815276
dc.identifier.urihttp://hdl.handle.net/10651/47105
dc.descriptionEuropean Conference on Power Electronics and Applications, EPE 2017 ECCE Europe (19th, 2017, Warsaw, Poland)
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartof2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
dc.rights© 2017 IEEE
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85042062932&doi=10.23919%2fEPE17ECCEEurope.2017.8099334&partnerID=40&md5=e9bcf01ee806c7de998837a11a9f06ac
dc.titleComparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.identifier.doi10.23919/EPE17ECCEEurope.2017.8099334
dc.type.dcmitext
dc.relation.publisherversionhttp://dx.doi.org/10.23919/EPE17ECCEEurope.2017.8099334


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