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Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology
| dc.contributor.author | Avila, Ander | |
| dc.contributor.author | García Bediaga, Asier | |
| dc.contributor.author | Oñederra, O. | |
| dc.contributor.author | Rujas, A. | |
| dc.contributor.author | Rodríguez Alonso, Alberto | |
| dc.date.accessioned | 2018-06-07T08:56:37Z | |
| dc.date.available | 2018-06-07T08:56:37Z | |
| dc.date.issued | 2017 | |
| dc.identifier.isbn | 9789075815276 | |
| dc.identifier.uri | http://hdl.handle.net/10651/47105 | |
| dc.description | European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) (19th. 2017. Warsaw, Poland) | |
| dc.language.iso | eng | |
| dc.publisher | IEEE | |
| dc.relation.ispartof | 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe | |
| dc.rights | © 2017 IEEE | |
| dc.rights | CC Reconocimiento – No Comercial – Sin Obra Derivada 4.0 Internacional | |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
| dc.source | Scopus | |
| dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042062932&doi=10.23919%2fEPE17ECCEEurope.2017.8099334&partnerID=40&md5=e9bcf01ee806c7de998837a11a9f06ac | |
| dc.title | Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology | |
| dc.type | conference output | spa |
| dc.identifier.doi | 10.23919/EPE17ECCEEurope.2017.8099334 | |
| dc.relation.publisherversion | http://dx.doi.org/10.23919/EPE17ECCEEurope.2017.8099334 | |
| dc.rights.accessRights | open access | |
| dc.type.hasVersion | AM |
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