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Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications

Author:
Saeed Hazkial Gerges, MariamUniovi authority; Rodríguez Rogina, MaríaUniovi authority; López Medina, MarioUniovi authority; Rodríguez Alonso, AlbertoUniovi authority; Arias Pérez de Azpeitia, ManuelUniovi authority; Briz del Blanco, FernandoUniovi authority
Publication date:
2017
Editorial:

IEEE

Publisher version:
http://dx.doi.org/10.23919/EPE17ECCEEurope.2017.8099160
Descripción física:
p. 8099160-
Description:

European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) (19th, 2007, Warsaw, Poland)

URI:
http://hdl.handle.net/10651/47100
ISBN:
9789075815276
DOI:
10.23919/EPE17ECCEEurope.2017.8099160
Patrocinado por:

This work was supported by the European Commission FP7 Large Project under grant UE-14-SPEED- 604057 and by the Spanish Government under projects DPI2014-56358-JIN and the grant FPI BES- 2014-070785.

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© assigned jointly to the European Power Electronics and Drives Association & the Institute of Electrical and Electronics Engineers (IEEE)
This item is protected with a Creative Commons License