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Different Modular Techniques Applied in a Synchronous Boost Converter with SiC MOSFETs to Obtain High Efficiency at Light Load and Low Current Ripple

Autor(es) y otros:
Vázquez Ardura, AitorAutoridad Uniovi; Rodríguez Alonso, AlbertoAutoridad Uniovi; Rodríguez Rogina, MaríaAutoridad Uniovi; González Lamar, DiegoAutoridad Uniovi
Palabra(s) clave:

Dc/dc bidirectional converters

Light load

Fecha de publicación:
2017
Editorial:

IEEE

Versión del editor:
http://dx.doi.org/10.1109/TIE.2017.2711521
Citación:
IEEE Transactions on Industrial Electronics, 64(10), p. 8373-8382 (2017); doi:10.1109/TIE.2017.2711521
Descripción física:
p. 8373-8382
Resumen:

This paper is focused on a high-voltage (400 to 800 V) bidirectional converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel converter, providing distributed energy-storage capability to a solid-state transformer. This converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a synchronous boost converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel-output-parallel synchronous boost converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques

This paper is focused on a high-voltage (400 to 800 V) bidirectional converter, which is intended to be used for the interconnection of battery-based energy-storage systems with the cells of a modular multilevel converter, providing distributed energy-storage capability to a solid-state transformer. This converter must have a high efficiency at medium and light load and also a low current ripple due to the charging and discharging processes. This work takes advantage of the use of SiC MOSFETs into a synchronous boost converter to accomplish the previous requirements. First, the adoption of a variable-switching frequency control to keep the efficiency high is analyzed, and second, the use of a modular converter with different control techniques to provide a current ripple reduction is also addressed in this study. An input-parallel-output-parallel synchronous boost converter, made up with three modules (3 kW per module), is used to validate experimentally the advantages of the use of SiC MOSFETs and to compare different control techniques

URI:
http://hdl.handle.net/10651/45536
ISSN:
0278-0046
DOI:
10.1109/TIE.2017.2711521
Patrocinado por:

Unión Europea [NMP3-LA-2013-604057]; Gobierno de España [MINECO-13-DPI2013-47176-C2-2-R, MINECO-15-DPI2014-56358-JIN, BES2014-070785]; Principado de Asturias[FC-15-GRUPIN14-143]; fondos FEDER

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  • Ingeniería Eléctrica, Electrónica, de Comunicaciones y de Sistemas [1090]
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