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Evaluation of SuperJunction MOSFETs in Cascode Configuration for Hard-Switching Operation

dc.contributor.authorRodríguez Méndez, Juan 
dc.contributor.authorRoig, Jaume
dc.contributor.authorRodríguez Alonso, Alberto 
dc.contributor.authorGonzález Lamar, Diego 
dc.contributor.authorBauwens, Filip
dc.date.accessioned2018-02-06T10:11:16Z
dc.date.available2018-02-06T10:11:16Z
dc.date.issued2017
dc.identifier.citationIEEE Transactions on Power Electronics, 8 (2018); doi:10.1109/TPEL.2017.2761823
dc.identifier.issn0885-8993
dc.identifier.urihttp://hdl.handle.net/10651/45461
dc.description.abstractSuperjunction MOSFETs in cascode configuration with low-voltage silicon MOSFETs are evaluated in this paper. The proposed structure combines the good switching performance provided by the cascode configuration with the benefits of the silicon technology such as its robustness, maturity, and low cost. This paper aims to explain and to demonstrate the reduction of switching losses of superjunction MOSFETs in cascode configuration with respect to their standalone counterparts (directly driven). A detailed simulation analysis of power loss contributions is carried out under hard-switching operation. Moreover, experimental evidence is provided using a boost converter (100-400 V) operating in continuous conduction mode for different switching frequencies (100-400 kHz) and output power levels (180-500 W)
dc.description.sponsorshipEste trabajo cuenta con el apoyo del Gobierno de España (MINECO-13-DPI2013-47176-C2-2-R, MINECO-15-DPI2014-56358-JIN, FPU14 / 03268 y FC-15- GRUPIN14-143) y las subvenciones del Fondo Europeo de Desarrollo Regional (FEDER)
dc.format.extentp. 7021-7037
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofIEEE Transactions on Power Electronics
dc.rights© IEEE 2017
dc.subjectCascode configuration
dc.subjectHigh frequency
dc.subjectHigh power density
dc.subjectHigh efficiency
dc.titleEvaluation of SuperJunction MOSFETs in Cascode Configuration for Hard-Switching Operation
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1109/TPEL.2017.2761823
dc.type.dcmitext
dc.relation.projectIDMINECO/13-DPI2013-47176-C2-2-R
dc.relation.projectIDMINECO/15-DPI2014-56358-JIN
dc.relation.projectIDMINECO/FPU14-03268
dc.relation.projectIDMINECO/FC-15-GRUPIN14-143
dc.relation.publisherversionhttp://dx.doi.org/10.1109/TPEL.2017.2761823


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