An insightful evaluation of a 650V high-voltage gan technology in cascode and stand-alone transistors

dc.contributor.author	Jaume, R.
dc.contributor.author	Manuel, F.
dc.contributor.author	Germán, G.
dc.contributor.author	Frederick, D.
dc.contributor.author	González Lamar, Diego
dc.contributor.author	Filip, B.
dc.date.accessioned	2017-12-14T11:03:57Z
dc.date.available	2017-12-14T11:03:57Z
dc.date.issued	2016
dc.identifier.isbn	9783800741861
dc.identifier.uri	http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7499528
dc.identifier.uri	http://hdl.handle.net/10651/44833
dc.format.extent	p. 1479, 7499528-1486
dc.language.iso	eng
dc.relation.ispartof	PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
dc.rights	©,
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85025644692&partnerID=40&md5=f43f5a6b8e41c886e2f6dd44be85bb55
dc.title	An insightful evaluation of a 650V high-voltage gan technology in cascode and stand-alone transistors	eng
dc.type	conference output	spa

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