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High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs

dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorGurpinar, Emre
dc.contributor.authorCastellazzi, Alberto
dc.date.accessioned2017-10-31T10:48:12Z
dc.date.available2017-10-31T10:48:12Z
dc.date.issued2017
dc.identifier.isbn978-1-5090-5366-7
dc.identifier.urihttp://hdl.handle.net/10651/44075
dc.descriptionIEEE Annual Applied Power Electronics Conference and Exposition (APEC) (32nd. 2017. Tampa)
dc.description.sponsorshipThis work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).
dc.format.extentp. 919-924
dc.language.isoeng
dc.relation.ispartof32nd IEEE Annual Applied Power Electronics Conference and Exposition (APEC)
dc.rights© 2017 IEEE
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85020040384&doi=10.1109%2fAPEC.2017.7930806&partnerID=40&md5=df6dcc36c6836230b97b8a977da1008d
dc.titleHigh-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
dc.typeconference outputspa
dc.identifier.doi10.1109/APEC.2017.7930806
dc.relation.projectIDPRX15/00594
dc.relation.projectIDENE2013-44245-R
dc.relation.projectIDMINECO/ENE2016-77919-R
dc.relation.projectIDFC-GRUPIN-IDI/2018/000241
dc.relation.publisherversionhttp://dx.doi.org/10.1109/APEC.2017.7930806
dc.rights.accessRightsopen access
dc.type.hasVersionAM


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