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High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs

Author:
García García, JorgeUniovi authority; Gurpinar, Emre; Castellazzi, Alberto
Publication date:
2017
Publisher version:
http://dx.doi.org/10.1109/APEC.2017.7930806
Descripción física:
p. 919-924
Description:

IEEE Annual Applied Power Electronics Conference and Exposition (APEC) (32nd. 2017. Tampa)

URI:
http://hdl.handle.net/10651/44075
ISBN:
978-1-5090-5366-7
DOI:
10.1109/APEC.2017.7930806
Patrocinado por:

This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).

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