High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
Autor(es) y otros:
Fecha de publicación:
2017
Versión del editor:
Descripción física:
p. 919-924
Descripción:
IEEE Annual Applied Power Electronics Conference and Exposition (APEC) (32nd. 2017. Tampa)
ISBN:
978-1-5090-5366-7
Patrocinado por:
This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).
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