Switching performance comparison of a power switch in a Cascode Configuration using a SuperJunction MOSFET

Abstract

This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch, based on Silicon technologies. In order to carry out this analysis, it will compare the cascode structure with the standalone connection, in which only one SJ-FET is used. The comparison is carried out in terms of switching behaviour, in order to verify if the cascode has a faster switching than a directly controlled SJ-FET. Experimental measurements are presented for both topologies working on a boost converter with an input voltage of 150 V, output voltage of 400 V, power range between 100 W and 400 W and a switching frequency range between 100 kHz and 400 kHz. Finally, an analysis of losses on the boost converter for both topologies is included