RUO Principal

Repositorio Institucional de la Universidad de Oviedo

Ver ítem 
  •   RUO Principal
  • Producción Bibliográfica de UniOvi: RECOPILA
  • Ponencias, Discursos y Conferencias
  • Ver ítem
  •   RUO Principal
  • Producción Bibliográfica de UniOvi: RECOPILA
  • Ponencias, Discursos y Conferencias
  • Ver ítem
    • español
    • English
JavaScript is disabled for your browser. Some features of this site may not work without it.

Listar

Todo RUOComunidades y ColeccionesPor fecha de publicaciónAutoresTítulosMateriasxmlui.ArtifactBrowser.Navigation.browse_issnPerfil de autorEsta colecciónPor fecha de publicaciónAutoresTítulosMateriasxmlui.ArtifactBrowser.Navigation.browse_issn

Mi cuenta

AccederRegistro

Estadísticas

Ver Estadísticas de uso

AÑADIDO RECIENTEMENTE

Novedades
Repositorio
Cómo publicar
Recursos
FAQs

Switching performance comparison of a power switch in a Cascode Configuration using a SuperJunction MOSFET

Autor(es) y otros:
López Antuña, AbrahamAutoridad Uniovi; Rodríguez Méndez, JuanAutoridad Uniovi; Rodríguez Rogina, MaríaAutoridad Uniovi; Castro Álvarez, IgnacioAutoridad Uniovi; Rodríguez Alonso, AlbertoAutoridad Uniovi
Fecha de publicación:
2016
Resumen:

This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch, based on Silicon technologies. In order to carry out this analysis, it will compare the cascode structure with the standalone connection, in which only one SJ-FET is used. The comparison is carried out in terms of switching behaviour, in order to verify if the cascode has a faster switching than a directly controlled SJ-FET. Experimental measurements are presented for both topologies working on a boost converter with an input voltage of 150 V, output voltage of 400 V, power range between 100 W and 400 W and a switching frequency range between 100 kHz and 400 kHz. Finally, an analysis of losses on the boost converter for both topologies is included

This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch, based on Silicon technologies. In order to carry out this analysis, it will compare the cascode structure with the standalone connection, in which only one SJ-FET is used. The comparison is carried out in terms of switching behaviour, in order to verify if the cascode has a faster switching than a directly controlled SJ-FET. Experimental measurements are presented for both topologies working on a boost converter with an input voltage of 150 V, output voltage of 400 V, power range between 100 W and 400 W and a switching frequency range between 100 kHz and 400 kHz. Finally, an analysis of losses on the boost converter for both topologies is included

Descripción:

51st International Universities' Power Engineering Conference, 6-9 September 2016, Coimbra (Portugal)

URI:
http://hdl.handle.net/10651/41607
Patrocinado por:

Government of Spain through projects DPI2013-47176-C2-2-R, MINECO-15-DPI2014-56358-JIN and the grants FPU14/03268 and FPI BES-2014-070785 and through funding from the Government of Asturias through the project FC-15-GRUPIN14-143 and FEDER funds

Colecciones
  • Ingeniería Eléctrica, Electrónica, de Comunicaciones y de Sistemas [1086]
  • Investigaciones y Documentos OpenAIRE [8365]
  • Ponencias, Discursos y Conferencias [4228]
Ficheros en el ítem
Thumbnail
untranslated
Paper (436.2Kb)
Compartir
Exportar a Mendeley
Estadísticas de uso
Estadísticas de uso
Metadatos
Mostrar el registro completo del ítem
Página principal Uniovi

Biblioteca

Contacto

Facebook Universidad de OviedoTwitter Universidad de Oviedo
El contenido del Repositorio, a menos que se indique lo contrario, está protegido con una licencia Creative Commons: Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Creative Commons Image