Influence of the hydrogen contained in amorphous silicon thin films on a pulsed radiofrequency argon glow discharge coupled to time of flight mass spectrometry. Comparison with the addition of hydrogen as discharge gas

dc.contributor.author	Sánchez, Pascal
dc.contributor.author	Alberts, Deborah Viviane M.
dc.contributor.author	Fernández García, Beatriz
dc.contributor.author	Menéndez Estrada, Armando
dc.contributor.author	Pereiro García, María Rosario
dc.contributor.author	Sanz Medel, Alfredo
dc.date.accessioned	2013-01-30T10:09:36Z
dc.date.available	2013-01-30T10:09:36Z
dc.date.issued	2012
dc.identifier.citation	Journal of Analytical Atomic Spectrometry, 27(1), p. 71-79 (2012); doi:10.1039/c1ja10235d	spa
dc.identifier.issn	0267-9477
dc.identifier.uri	http://hdl.handle.net/10651/8737
dc.format.extent	p. 71-79	spa
dc.language.iso	eng
dc.relation.ispartof	Journal of Analytical Atomic Spectrometry	spa
dc.source	SCOPUS	spa
dc.title	Influence of the hydrogen contained in amorphous silicon thin films on a pulsed radiofrequency argon glow discharge coupled to time of flight mass spectrometry. Comparison with the addition of hydrogen as discharge gas	spa
dc.type	journal article
dc.identifier.local	20120019	spa
dc.identifier.doi	10.1039/c1ja10235d
dc.relation.publisherversion	http://dx.doi.org/10.1039/c1ja10235d	spa

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