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Resistive switching of vo2 films grown on a thermal insulator

dc.contributor.authorRischau, C. W.
dc.contributor.authorGariglio, S.
dc.contributor.authorTriscone, J. M.
dc.contributor.authorValle Granda, Javier del 
dc.date.accessioned2025-03-14T08:50:46Z
dc.date.available2025-03-14T08:50:46Z
dc.date.issued2024
dc.identifier.citationPhysical Review Applied, 22(1), (2024); doi:10.1103/PhysRevApplied.22.014021
dc.identifier.issn2331-7019
dc.identifier.urihttps://hdl.handle.net/10651/77585
dc.description.sponsorshipU.S. Office of Naval Research through the NICOP Grant [N62909-21-1-2028]; Swiss National Science Foundation through an Ambizione Fellowship [PZ00P2_185848]; Spanish Ministry of Science through a Ramon y Cajal Fellowship [RYC2021-030952-I]; Asturias FICYT [AYUD/2021/51185]; FEDER funds; Swiss National Science Foundation (SNF) [PZ00P2_185848] Funding Source: Swiss National Science Foundation (SNF)
dc.language.isoeng
dc.relation.ispartofPhysical Review Applied
dc.rights©,
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85198579801&doi=10.1103%2fPhysRevApplied.22.014021&partnerID=40&md5=63ee8be0c4157ebb4845fcc22f95d568
dc.titleResistive switching of vo2 films grown on a thermal insulator
dc.typejournal article
dc.identifier.doi10.1103/PhysRevApplied.22.014021
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevApplied.22.014021


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