Power Loss Modeling and Impact of Current Measurement on the Switching Characterization in Enhancement-Mode GaN Transistors
Fecha de publicación:
2024
Versión del editor:
Citación:
IEEE Journal of Emerging and Selected Topics in Power Electronics, 12(6), p. 5404 - 5420 (2024); doi:10.1109/JESTPE.2024.3431270
Descripción física:
p. 5404 - 5420
ISSN:
Patrocinado por:
This work was supported by grant MCINN-22-TED2021-129796B-C21 and MCINN-23-PID2022-139479OB-C22 funded by MCIN/AEI /10.13039/501100011033. This work has been partially funded from the EU H2020 R&I Program under grant agreement 864459 (Project “TALENT”) and through ERFD Structural Funds. This work has been partially supported by PID2019-111051RB-100 (Project “B2B- Energy”) and the government of the Principality of Asturias (FICYT) under Severo Ochoa research grant PF-BP19-078.
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