Excitonic features in the optical response of layered gallium sulphide

dc.contributor.author	Juan, D.
dc.contributor.author	Gutiérrez Vela, Yael
dc.contributor.author	García Fernández, Pablo
dc.contributor.author	Junquera, J.
dc.contributor.author	Losurdo, M.
dc.contributor.author	Moreno, F.
dc.date.accessioned	2024-07-11T07:30:55Z
dc.date.available	2024-07-11T07:30:55Z
dc.date.issued	2023
dc.identifier.isbn	979-835032395-5
dc.identifier.uri	https://hdl.handle.net/10651/73359
dc.description.sponsorship	Acknowledge funding from European Union's Horizon 2020 research and innovation program (No 899598 – PHEMTRONICS) and computational resources from Scientific Computing Administration of the Johannes Kepler University (JKU), Linz, Austria and the Investigation Computational Service of Cantabria University (UC), Santander, Spain.
dc.format.extent	p. 125-128
dc.language.iso	eng
dc.relation.ispartof	Proceedings of the International Semiconductor Conference, CAS
dc.rights	©,
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85178659314&doi=10.1109%2fCAS59036.2023.10303687&partnerID=40&md5=7b33032a9b3fbf90161485f0ba388bcf
dc.title	Excitonic features in the optical response of layered gallium sulphide
dc.type	conference output
dc.identifier.doi	10.1109/CAS59036.2023.10303687
dc.relation.publisherversion	http://dx.doi.org/10.1109/CAS59036.2023.10303687

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