Resistive switching localization by selective focused ion beam irradiation

dc.contributor.author	Ghazikhanian, Nareg
dc.contributor.author	Valle Granda, Javier del
dc.contributor.author	Salev, Pavel
dc.contributor.author	El Hage, Ralph
dc.contributor.author	Kalcheim, Yoav
dc.contributor.author	Adda, Coline
dc.contributor.author	Schuller, Ivan K.
dc.date.accessioned	2024-04-18T07:20:40Z
dc.date.available	2024-04-18T07:20:40Z
dc.date.issued	2023
dc.identifier.citation	Applied Physics Letters, 123(12) (2023); doi:10.1063/5.0151823
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	https://hdl.handle.net/10651/72182
dc.description.sponsorship	This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-22-1-0135. Device fabrication and irradiation were carried out at the NANO3 cleanroom facility at UC San Diego. [FA9550-22-1-0135]; Air Force Office of Scientific Research
dc.language.iso	eng
dc.relation.ispartof	Applied Physics Letters
dc.rights	© 2023 Author(s). Published under an exclusive license by AIP Publishing.
dc.source	WOS:001074645700015
dc.title	Resistive switching localization by selective focused ion beam irradiation
dc.type	journal article
dc.identifier.doi	10.1063/5.0151823
dc.relation.publisherversion	http://dx.doi.org/10.1063/5.0151823
dc.rights.accessRights	open access
dc.type.hasVersion	VoR