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Resistive switching localization by selective focused ion beam irradiation

dc.contributor.authorGhazikhanian, Nareg
dc.contributor.authorValle Granda, Javier del 
dc.contributor.authorSalev, Pavel
dc.contributor.authorEl Hage, Ralph
dc.contributor.authorKalcheim, Yoav
dc.contributor.authorAdda, Coline
dc.contributor.authorSchuller, Ivan K.
dc.date.accessioned2024-04-18T07:20:40Z
dc.date.available2024-04-18T07:20:40Z
dc.date.issued2023
dc.identifier.citationApplied Physics Letters, 123(12), (2023); doi:10.1063/5.0151823
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/10651/72182
dc.description.sponsorshipThis work was supported by the Air Force Office of Scientific Research under Award No. FA9550-22-1-0135. Device fabrication and irradiation were carried out at the NANO3 cleanroom facility at UC San Diego. [FA9550-22-1-0135]; Air Force Office of Scientific Research
dc.language.isoeng
dc.relation.ispartofApplied Physics Letters
dc.rights©,
dc.sourceWOS:001074645700015
dc.titleResistive switching localization by selective focused ion beam irradiation
dc.typejournal article
dc.identifier.doi10.1063/5.0151823
dc.relation.publisherversionhttp://dx.doi.org/10.1063/5.0151823


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