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Realizing high thermoelectric performance in n-type se-free bi2te3 materials by spontaneous incorporation of fete2 nanoinclusions

dc.contributor.authorRahman, J. U.
dc.contributor.authorNam, W. H.
dc.contributor.authorJung, Y. J.
dc.contributor.authorGarcía Suárez, Víctor Manuel 
dc.contributor.author
dc.date.accessioned2024-01-16T07:20:57Z
dc.date.available2024-01-16T07:20:57Z
dc.date.issued2023
dc.identifier.citationEnergy and Environmental Materials (2023); doi:10.1002/eem2.12663
dc.identifier.issn2575-0348
dc.identifier.urihttps://hdl.handle.net/10651/70639
dc.description.sponsorshipThis research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2022M3H4A1A04076667).
dc.language.isoeng
dc.relation.ispartofEnergy and Environmental Materials
dc.rights© 2023 The Authors
dc.rightsCC Reconocimiento 4.0 Internacional
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85166425863&doi=10.1002%2feem2.12663&partnerID=40&md5=3e88534512d0dff1265451616fd78c9a
dc.titleRealizing high thermoelectric performance in n-type se-free bi2te3 materials by spontaneous incorporation of fete2 nanoinclusions
dc.typejournal article
dc.identifier.doi10.1002/eem2.12663
dc.relation.publisherversionhttp://dx.doi.org/10.1002/eem2.12663
dc.rights.accessRightsopen access
dc.type.hasVersionVoR


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