Realizing high thermoelectric performance in n-type se-free bi2te3 materials by spontaneous incorporation of fete2 nanoinclusions

dc.contributor.author	Rahman, J. U.
dc.contributor.author	Nam, W. H.
dc.contributor.author	Jung, Y. J.
dc.contributor.author	García Suárez, Víctor Manuel
dc.contributor.author
dc.date.accessioned	2024-01-16T07:20:57Z
dc.date.available	2024-01-16T07:20:57Z
dc.date.issued	2023
dc.identifier.citation	Energy and Environmental Materials (2023); doi:10.1002/eem2.12663
dc.identifier.issn	2575-0348
dc.identifier.uri	https://hdl.handle.net/10651/70639
dc.description.sponsorship	This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2022M3H4A1A04076667).
dc.language.iso	eng
dc.relation.ispartof	Energy and Environmental Materials
dc.rights	© 2023 The Authors
dc.rights	CC Reconocimiento 4.0 Internacional
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85166425863&doi=10.1002%2feem2.12663&partnerID=40&md5=3e88534512d0dff1265451616fd78c9a
dc.title	Realizing high thermoelectric performance in n-type se-free bi2te3 materials by spontaneous incorporation of fete2 nanoinclusions
dc.type	journal article
dc.identifier.doi	10.1002/eem2.12663
dc.relation.publisherversion	http://dx.doi.org/10.1002/eem2.12663
dc.rights.accessRights	open access
dc.type.hasVersion	VoR

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