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Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry

dc.contributor.authorPisonero Castro, Jorge 
dc.contributor.authorLobo Revilla, Lara 
dc.contributor.authorBordel García, Nerea 
dc.contributor.authorTempez, Agnès
dc.contributor.authorBensaoula, Abdelhak
dc.contributor.authorBadi, Nacer
dc.contributor.authorSanz Medel, Alfredo
dc.identifier.citationSolar Energy Materials and Solar Cells, 94(8), p. 1352-1357 (2010); doi:10.1016/j.solmat.2010.04.002spa
dc.description.abstractThe analytical potential of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (pulsed-rf-GD-TOFMS) is investigated for fast quantitative analysis of major and dopant elements in bulk and thin film layers. This technique does not require sampling at ultra-high vacuum conditions and so it facilitates high sample throughput compared to reference techniques as secondary ionization mass spectrometry (SIMS). In this paper, bulk and boron implanted silicon samples are analyzed. Boron concentration in Si samples is calculated from calibration curves obtained using solar grade silicon and B doped silicon wafers as calibrating materials, and using 29Si+ ion signal as internal standard. Qualitative depth profiles of 10B implanted silicon are determined in a few seconds using the low-pressure pulsed-rf-GD-TOFMS system. Additionally, quantitative depth profiles are easily determined making use of the calibration curves. A good agreement with the depth profiles measured using SIMS was obtained, demonstrating the analytical potential of the pulsed-GD-TOFMS system for fast, sensitive and high depth resolution analysis of implanted silicon
dc.format.extentp. 1352-1357spa
dc.relation.ispartofSolar Energy Materials and Solar Cellsspa
dc.rights(c) Solar Energy Materials and Solar Cells
dc.subjectGlow Discharge; Mass Spectrometry; Doped Silicon; Multi-Crystalline and Monocrystalline Silicon; Depth Profile; Boron Mass Contentspa
dc.titleQuantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometryspa

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