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Analytical power loss model for gan transistors

dc.contributor.authorAl Mdanat, Rand Bassam T
dc.contributor.authorSaeed Hazkial Gerges, Sarah 
dc.contributor.authorGeorgious Zaher Georgious, Ramy 
dc.contributor.authorGarcía García, Jorge 
dc.date.accessioned2022-09-06T07:28:28Z
dc.date.available2022-09-06T07:28:28Z
dc.date.issued2021
dc.identifier.isbn9781665405287
dc.identifier.urihttp://hdl.handle.net/10651/64514
dc.descriptionIEEE Vehicle Power and Propulsion Conference, VPPC (18th. 2021. Gijón, Spain)
dc.description.sponsorshipThis work has been partially funded from the EU H2020 R&I Program under grant agreement 864459 (Project ”TALENT”), and through ERFD Structural Funds. This work has been partially supported by the Spanish Government, ID&R Office (MEC), under research grants ENE2016-77919 (Project “Conciliator”), and PID2019-111051RB-100 (Project “B2BEnergy”). This work has been partially supported by the government of Principality of Asturias (FICYT), under Grant FCGRUPIN-IDI/2018/000241 and Severo Ochoa research grant PF-BP19-078.
dc.language.isoeng
dc.relation.ispartof2021 IEEE vehicle power and propulsion conference, vppc 2021 - proceedings
dc.rights© 2021 IEEE
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85126205799&doi=10.1109%2fVPPC53923.2021.9699229&partnerID=40&md5=1fe700174e4d4116b970b4572d459c64
dc.titleAnalytical power loss model for gan transistors
dc.typeconference outputspa
dc.identifier.doi10.1109/VPPC53923.2021.9699229
dc.relation.projectIDinfo:eu‐repo/grantAgreement/EC/H2020/864459
dc.relation.projectIDMEC/ENE2016-7791
dc.relation.projectIDMEC/PID2019-111051RB-100
dc.relation.projectIDFCGRUPIN-IDI/2018/000241
dc.relation.projectIDSevero Ochoa/PF-BP19-078
dc.relation.publisherversionhttp://dx.doi.org/10.1109/VPPC53923.2021.9699229


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