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A study of integrated signal and power transfer for compact isolated SiC MOSFET gate-drivers

dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorSaeed Hazkial Gerges, Sarah 
dc.contributor.authorGurpinar, E.
dc.contributor.authorCastellazzi, A.
dc.date.accessioned2021-07-26T07:50:03Z
dc.date.available2021-07-26T07:50:03Z
dc.date.issued2021
dc.identifier.citationElectronics (Switzerland), 10(2) (2021); doi:10.3390/electronics10020159
dc.identifier.issn2079-9292
dc.identifier.urihttp://hdl.handle.net/10651/59923
dc.description.sponsorshipSpanish Government, Innovation Development and Research Office (MEC) [ENE2016-77919, PID2019-111051RB-100]; European Union through ERFD Structural Funds (FEDER); Regional Government of the Principality of Asturias [FC-GRUPIN-IDI/2018/000241, Severo Ochoa grant BP16-133]; European Union’s H2020 Research and Innovation program [grant agreement 864459], Project “Cost Effective Technological Developments For Accelerating Energy Transition (TALENT)”
dc.language.isoeng
dc.relation.ispartofElectronics (Switzerland)
dc.rights© 2021 los autores
dc.rightsCC Reconocimiento 4.0 Internacional
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85100083770&doi=10.3390%2felectronics10020159&partnerID=40&md5=8058bb5e1fb4d626f53fd05375cb659b
dc.titleA study of integrated signal and power transfer for compact isolated SiC MOSFET gate-drivers
dc.typejournal article
dc.identifier.doi10.3390/electronics10020159
dc.relation.projectIDMEC/ENE2016-77919
dc.relation.projectIDMEC/PID2019-111051RB-100
dc.relation.projectIDFC-GRUPIN-IDI/2018/000241
dc.relation.projectIDSevero Ochoa/BP16-133
dc.relation.projectIDinfo:eu‐repo/grantAgreement/EC/H2020/864459
dc.relation.publisherversionhttp://dx.doi.org/10.3390/electronics10020159
dc.rights.accessRightsopen access
dc.type.hasVersionVoR


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