Determining the Self-Thermal Impedances of Power Transistors and Diodes of an IGBT Module Based on Its 3D Model

dc.contributor.author	Ilyin, M. V.
dc.contributor.author	Vilkov, E. A.
dc.contributor.author	Gulyaev, I. V.
dc.contributor.author	Briz del Blanco, Fernando
dc.date.accessioned	2020-01-23T08:17:36Z
dc.date.available	2020-01-23T08:17:36Z
dc.date.issued	2019
dc.identifier.citation	Russian Electrical Engineering, 90(7), p. 491-495 (2019); doi:10.3103/S1068371219070071
dc.identifier.issn	1068-3712
dc.identifier.uri	http://hdl.handle.net/10651/53767
dc.description.sponsorship	This work was supported by the Russian Scientific Foundation, project no. 15-19-20057P.
dc.format.extent	p. 491-495
dc.language.iso	eng
dc.relation.ispartof	Russian Electrical Engineering, 90
dc.rights	© 2019 Ilyin et al.
dc.source	Scopus
dc.source.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85073193172&doi=10.3103%2fS1068371219070071&partnerID=40&md5=bca401c367c47e0a04ab03482a8e41b6
dc.title	Determining the Self-Thermal Impedances of Power Transistors and Diodes of an IGBT Module Based on Its 3D Model
dc.type	journal article
dc.identifier.doi	10.3103/S1068371219070071
dc.relation.publisherversion	http://dx.doi.org/10.3103/S1068371219070071

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