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Self-powering high frequency modulated SiC Power MOSFET isolated gate driver

dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorSaeed Hazkial Gerges, Sarah 
dc.contributor.authorGurpinar, E.
dc.contributor.authorCastellazzi, A.
dc.contributor.authorGarcía Fernández, Pablo 
dc.date.accessioned2019-11-14T10:22:20Z
dc.date.available2019-11-14T10:22:20Z
dc.date.issued2019
dc.identifier.citationIEEE Transactions on Industry Applications, 55(4), p. 3967-3977 (2019); doi:10.1109/TIA.2019.2910789
dc.identifier.issn0093-9994
dc.identifier.urihttp://hdl.handle.net/10651/53301
dc.description.sponsorshipSpanish Government under the research mobility Grant PRX15/00594 for professors and researchers in foreign higher education and research institutions (MECD) ENE2016-77919; European Union through ERFD Structural Funds (FEDER); Government of the Principality of Asturias under Grant FC-GRUPIN-IDI/2018/000241 and under “Severo Ochoa” Program of predoctoral grants
dc.format.extentp. 3967-3977
dc.language.isoeng
dc.relation.ispartofIEEE Transactions on Industry Applications, 55
dc.rights© 2019 IEEE
dc.rightsCC Reconocimiento - No Comercial - Sin Obra Derivada 4.0 Internacional
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourceScopus
dc.source.urihttps://www2.scopus.com/inward/record.uri?eid=2-s2.0-85068589751&doi=10.1109%2fTIA.2019.2910789&partnerID=40&md5=374fa9e3f3b17e60c3422d072094e4e6
dc.titleSelf-powering high frequency modulated SiC Power MOSFET isolated gate driver
dc.typejournal article
dc.identifier.doi10.1109/TIA.2019.2910789
dc.relation.projectIDFC-GRUPIN-IDI/2018/000241
dc.relation.projectIDPRX15/00594
dc.relation.projectIDMECD/ENE2016-77919
dc.relation.publisherversionhttp://dx.doi.org/10.1109/TIA.2019.2910789
dc.rights.accessRightsopen access
dc.type.hasVersionAM


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