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A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications

Author:
Martínez, Pedro J.; Fernández Miaja, PabloUniovi authority; Rodríguez Méndez, JuanUniovi authority; Maset, Enrique
Subject:

HEMTs

Semiconductor device reliability

Publication date:
2019
Editorial:

IEEE

Publisher version:
https://doi.org/10.1109/JESTPE.2019.2912130
Abstract:

Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing the GaN HEMTs with different stress voltages and times maintaining the desired current level, and allows for repeating the test in successive switching pulses, with adjustable switching frequency and duty cycle, always with the same current, mimicking a real power electronics application

Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing the GaN HEMTs with different stress voltages and times maintaining the desired current level, and allows for repeating the test in successive switching pulses, with adjustable switching frequency and duty cycle, always with the same current, mimicking a real power electronics application

URI:
http://hdl.handle.net/10651/51555
ISSN:
2168-6777; 2168-6785
DOI:
10.1109/JESTPE.2019.2912130
Patrocinado por:

This work was supported in part by the Spanish Government under the Project MINECO-FEDER ESP2015-68117-C2-1-R,in part by the scholarship CEICE-GVA-ACIF-2016-330

Id. Proyecto:

MINECO-FEDER/ ESP2015-68117-C2-1-R

CEICE-GVA-ACIF-2016-330

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