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Synchronous Boost Converter with High Efficiency at Light Load using QSW-ZVS and SiC MOSFETs

Autor(es) y otros:
Rodríguez Alonso, AlbertoAutoridad Uniovi; Vázquez Ardura, AitorAutoridad Uniovi; Rodríguez Rogina, MaríaAutoridad Uniovi; Briz del Blanco, FernandoAutoridad Uniovi
Palabra(s) clave:

DC/DC bidirectional converters

Quasi-square wave-zero voltage switching (QSW-ZVS)

Light load operation

Triangular current mode (TCM)

Fecha de publicación:
2017
Editorial:

IEEE

Versión del editor:
http://dx.doi.org/10.1109/TIE.2017.2716864
Citación:
IEEE Transactions on Industrial Electronics, 65(1), p. 386-393 (2018); doi:10.1109/TIE.2017.2716864
Descripción física:
p. 386-393
Resumen:

A converter intended to be used for the interconnection of battery-based energy storage systems with the cells of a multilevel converter is addressed in this paper. High efficiency at light and medium loads is important in these applications and it can be achieved using soft switching techniques. Two control techniques with fixed and variable switching frequency are proposed and compared. The use of silicon carbide (SiC) mosfets provides a higher attainable switching frequency, which is especially interesting in variable frequency control techniques, allowing the operation at high voltages and high switching frequencies, with high efficiencies over a wide power range. A synchronous boost DC/DC converter rated for 400 to 800 V and 10 kW is designed and developed with SiC mosfets obtaining efficiencies higher than 97% from 100% to 3.5% of full load using a variable switching frequency (up to 200 kHz) control. Significant efficiency improvement is achieved at medium and light loads

A converter intended to be used for the interconnection of battery-based energy storage systems with the cells of a multilevel converter is addressed in this paper. High efficiency at light and medium loads is important in these applications and it can be achieved using soft switching techniques. Two control techniques with fixed and variable switching frequency are proposed and compared. The use of silicon carbide (SiC) mosfets provides a higher attainable switching frequency, which is especially interesting in variable frequency control techniques, allowing the operation at high voltages and high switching frequencies, with high efficiencies over a wide power range. A synchronous boost DC/DC converter rated for 400 to 800 V and 10 kW is designed and developed with SiC mosfets obtaining efficiencies higher than 97% from 100% to 3.5% of full load using a variable switching frequency (up to 200 kHz) control. Significant efficiency improvement is achieved at medium and light loads

URI:
http://hdl.handle.net/10651/48610
ISSN:
0278-0046; 1557-9948
DOI:
10.1109/TIE.2017.2716864
Patrocinado por:

Trabajo apoyado por la Comisión Europea bajo el Séptimo Programa Marco, proyecto NMP3-LA-2013-604057, por el Gobierno español (DPI2013-47176-C2-2-R y DPI2014-56358-JIN), la beca de estudiante BES2014-070785, y a través del Gobierno de Asturias mediante el proyecto FC-15-GRUPIN14-143, y fondos FEDER

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  • Ingeniería Eléctrica, Electrónica, de Comunicaciones y de Sistemas [1087]
  • Investigaciones y Documentos OpenAIRE [8403]
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