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High Voltage 4H-SiC Power MOSFETs with Boron doped gate oxide

Author:
Soler, Víctor; Cabello, María; Berthou, Maxime; Montserrat, Josep; Rebollo, José; Godignon, Philippe; Mihaila, Andrei; Rodríguez Rogina, MaríaUniovi authority; Rodríguez Alonso, AlbertoUniovi authority; Sebastián Zúñiga, Francisco JavierUniovi authority
Subject:

Gate dielectric

High Voltage

Power MOSFET

SiC

Wide Band Gap

Semiconductors

Publication date:
2017
Editorial:

IEEE

Publisher version:
http://dx.doi.org/10.1109/TIE.2017.2723865
Citación:
IEEE Transactions on Industrial Electronics (2017); doi:10.1109/TIE.2017.2723865
Abstract:

A new process technology for 4H-SiC planar power MOSFETs based on a Boron diffusion step to improve the SiO2/SiC interface quality is presented in this work. Large area (up to 25 mm2) power MOSFETs of three voltages ratings (1.7 kV, 3.3 kV and 4.5 kV) have been fabricated showing significant improvements in terms of inversion channel mobility and on-resistance in comparison with counterparts without Boron oxide treatment. Experimental results show a remarkable increase of the channel mobility, which raises the device current capability, especially at room temperature. When operating at high temperature, the impact of the high channel mobility due to Boron treatment on electrical forward characteristics is reduced as the drift layer resistance starts to dominate in the total on-state resistance. In addition, the 3rd quadrant characteristics approximate to those of an ideal PiN diode, and the device blocking capability is not compromised by the use of Boron for the gate oxide formation. The experimental performance in a simple DC/DC converter is also presented.

A new process technology for 4H-SiC planar power MOSFETs based on a Boron diffusion step to improve the SiO2/SiC interface quality is presented in this work. Large area (up to 25 mm2) power MOSFETs of three voltages ratings (1.7 kV, 3.3 kV and 4.5 kV) have been fabricated showing significant improvements in terms of inversion channel mobility and on-resistance in comparison with counterparts without Boron oxide treatment. Experimental results show a remarkable increase of the channel mobility, which raises the device current capability, especially at room temperature. When operating at high temperature, the impact of the high channel mobility due to Boron treatment on electrical forward characteristics is reduced as the drift layer resistance starts to dominate in the total on-state resistance. In addition, the 3rd quadrant characteristics approximate to those of an ideal PiN diode, and the device blocking capability is not compromised by the use of Boron for the gate oxide formation. The experimental performance in a simple DC/DC converter is also presented.

URI:
http://hdl.handle.net/10651/43447
ISSN:
0278-0046
DOI:
10.1109/TIE.2017.2723865
Patrocinado por:

This work has been partially supported by the EU through the SPEED FP7 Large Project (NMP3-LA-2013-604057) and by the research program from the Spanish Ministry of “Economía y Competitividad” HiVolt-Tech (TEC2014-54357-C2-1-R) cofunded by the EU-ERDF (FEDER)

Id. Proyecto:

NMP3-LA-2013-604057

MINECO/TEC2014-54357-C2-1-R

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