High-Frequency Modulated Secondary-Side Self-Powered Isolated Gate Driver for Full Range PWM Operation of SiC Power MOSFETs
Publication date:
2017
Descripción física:
6 p.
Description:
AEPEC 2017 (Tampa, Florida)
Patrocinado por:
This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).