Gate impedance characterization and performance evaluation of 3.3kV silicon carbide MOSFETs
Publication date:
Abstract:
For the development of new wide bandgap high voltage semiconductors, it is necessary to carry out a thorough characterization of their behavior towards their future use in real applications. In this document a basic characterization of new 3.3 kV SiC MOSFET prototypes is presented, both static and dynamic. While the static characterization provides quite good figures of merit of the prototype under test, in the dynamic characterization, slow transitions are detected and they will be explained proposing a model for the configuration of the gate cell inner connections of the presented prototype
Description:
51st International Universities' Power Engineering Conference, 6-9 September 2016, Coimbra (Portugal)
Patrocinado por:
Government of Spain through projects DPI2013-47176-C2-2-R, MINECO-15-DPI2014-56358-JIN and the grant FPI BES-2014-070785, through funding from the Government of Asturias through the project FC-15-GRUPIN14-143 and FEDER funds, and thanks to the project of the European Commission “Silicon Carbide Power Electronics Technology for Energy Efficient Devices”, SPEED, FP7 Large Project (NMP3-LA-2013-604057)
Id. Proyecto:
DPI2013-47176-C2-2-R
MINECO-15-DPI2014-56358-JIN
FPI BES-2014-070785
FC-15-GRUPIN14-143
FP7 Large Project (NMP3-LA-2013-604057)
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