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Atomic vacancy engineering of graphitic surfaces: Controlling the generation and harnessing the migration of the single vacancy

dc.contributor.authorParedes Nachón, Juan Ignacio
dc.contributor.authorSolís Fernández, Pablo
dc.contributor.authorMartínez Alonso, Amelia
dc.contributor.authorDíez Tascón, Juan Manuel
dc.date.accessioned2016-03-14T16:52:39Z
dc.date.available2016-03-14T16:52:39Z
dc.date.issued2009
dc.identifier.citationJournal of Physical Chemistry C, 113(23) p. 10249-10255 (2009); doi:10.1021/jp901578c
dc.identifier.issn1932-7447
dc.identifier.urihttp://hdl.handle.net/10651/35628
dc.description.sponsorshipP.S.-F. acknowledges an I3P predoctoral contract from CSIC. Partial funding of this work by the Spanish MEC through projects CTQ2004-07698-C02-02 and CTQ2005-09105-C04-02 is gratefully acknowledged.
dc.format.extentp. 10249-10255
dc.language.isoeng
dc.relation.ispartofJournal of Physical Chemistry C
dc.rights© 2009 American Chemical Society
dc.sourceScopus
dc.source.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-67649909009&partnerID=40&md5=3cae0ae8491d6fb1dede7cdc6ff8e7ff
dc.titleAtomic vacancy engineering of graphitic surfaces: Controlling the generation and harnessing the migration of the single vacancy
dc.typejournal article
dc.identifier.doi10.1021/jp901578c
dc.relation.publisherversionhttp://dx.doi.org/10.1021/jp901578c


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