Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration

dc.contributor.author	Rodríguez Alonso, Alberto
dc.contributor.author	Fernández Díaz, Marcos
dc.contributor.author	González Lamar, Diego
dc.contributor.author	Arias Pérez de Azpeitia, Manuel
dc.contributor.author	Hernando Álvarez, Marta María
dc.contributor.author	Sebastián Zúñiga, Francisco Javier
dc.date.accessioned	2014-04-04T08:14:38Z
dc.date.available	2014-04-04T08:14:38Z
dc.date.issued	2014
dc.identifier.citation	IEEE Transactions on Power Electronics, 29(5), p. 2428-2440 (2014); doi:10.1109/TPEL.2013.2283144
dc.identifier.issn	0885-8993
dc.identifier.issn	1941-0107
dc.identifier.uri	http://hdl.handle.net/10651/25280
dc.format.extent	p. 2428-2440
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof	IEEE Transactions on Power Electronics
dc.rights	© 2013 IEEE
dc.title	Switching performance comparison of the SiC JFET and the SiC JFET/Si MOSFET cascode configuration	eng
dc.type	journal article
dc.identifier.local	20141141
dc.identifier.doi	10.1109/TPEL.2013.2283144
dc.relation.publisherversion	http://dx.doi.org/10.1109/TPEL.2013.2283144
dc.rights.accessRights	open access
dc.type.hasVersion	AM