Domain nucleation across the metal-insulator transition of self-strained V2 O3 films

Lab-based XRD measurements were supported by the European Union’s Horizon Europe research and innovation program under Grant Agreement No. 101039986– “Highly Energy-Efficient Resistive Switching in Defect- and Strain- Engineered Mott Insulators for Neuromorphic Computing Applications.” J.d.V. was supported by the Spanish Ministry of Science through a Ramón y Cajal Fellowship (Grant No. RYC2021-030952-I) and by the Asturias FICYT under Grant No. AYUD/2021/51185 with the support of FEDER funds.

Repositorio Institucional de la Universidad de Oviedo

Domain nucleation across the metal-insulator transition of self-strained V2 O3 films

Autor(es) y otros:

Fecha de publicación:

Versión del editor:

Citación:

URI:

ISSN:

DOI:

Patrocinado por:

Colecciones

Ficheros en el ítem

Métricas

Compartir

Estadísticas de uso

Metadatos