Positive and Negative Pressure Regimes in Anisotropically Strained V2 O3 Films

The work at the Technion was supported by the Israel Science Foundation grant no. 1031/21 and the European Research Council. This project has received funding from the European Union’s Horizon Europe Research and Innovation Programme under grant agreement no. 2031928—“Highly Energy-Efficient Resistive Switching in Defect- and Strain- Engineered Mott Insulators for Neuromorphic Computing Applications”. Views and opin- ions expressed are; however, those of the authors only and do not necessarily reflect those of the European Union or the European research council. The work at UCSD was supported by the U.S. Air Force Office of Scientific Research under Award no. FA9550-20-1-0242. D.D. and Y.K. would like to thank Dr. Richard Tran for insightful discussions concerning DFT simulations. J.d.V. acknowledges support from the Spanish Ministry of Science through a Ramón y Cajal Fellowship (RYC2021-030952-I).