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Infrared Permittivity of the Biaxial van der Waals Semiconductor α-MoO3 from Near- and Far-Field Correlative Studies

dc.contributor.authorÁlvarez Pérez, Gonzalo 
dc.contributor.authorFolland, T. G.
dc.contributor.authorErrea, I.
dc.contributor.authorTaboada Gutiérrez, Javier 
dc.contributor.authorDuan, Jiahua 
dc.contributor.authorMartín Sánchez, Javier 
dc.contributor.authorFernández-Tresguerres Mata, Ana Isabel 
dc.contributor.authorMatson, J. R.
dc.contributor.authorBylinkin, A.
dc.contributor.authorHe, M.
dc.contributor.authorMa, W.
dc.contributor.authorBao, Q.
dc.contributor.authorMartín J.I.
dc.contributor.authorCaldwell, J. D.
dc.contributor.authorNikitin, A. Y.
dc.contributor.authorAlonso González, Pablo 
dc.date.accessioned2020-09-24T07:43:24Z
dc.date.available2020-09-24T07:43:24Z
dc.date.issued2020
dc.identifier.citationAdvanced Materials (2020); doi:10.1002/adma.201908176
dc.identifier.issn0935-9648
dc.identifier.urihttp://hdl.handle.net/10651/56350
dc.description.sponsorshipA.Y.N. acknowledges the Spanish Ministry of Science, Innovation and Universities (national project MAT2017‐88358‐C3‐3‐R) and Basque Government (grant No. IT1164‐19). P.A‐G. acknowledges support from the European Research Council under Starting Grant 715496, 2DNANOPTICA.
dc.language.isoeng
dc.relation.ispartofAdvanced Materials
dc.rights©,
dc.sourceScopus
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85085918439&doi=10.1002%2fadma.201908176&partnerID=40&md5=32de8fc2822c26b1cbe59fcc585ad2ab
dc.titleInfrared Permittivity of the Biaxial van der Waals Semiconductor α-MoO3 from Near- and Far-Field Correlative Studies
dc.typejournal article
dc.identifier.doi10.1002/adma.201908176
dc.relation.projectIDinfo:eu‐repo/grantAgreement/EC/H2020/715496
dc.relation.publisherversionhttp://dx.doi.org/10.1002/adma.201908176


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