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Repositorio de la Universidad de Oviedo. > Producción Bibliográfica de UniOvi: RECOPILA > Artículos >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10651/9420

Title: Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements
Author(s): Sánchez, Pascal
Lorenzo, Olaya
Menéndez Estrada, Armando
Menéndez Río, José Luis
Gómez Plaza, David
Pereiro García, María Rosario
Fernández García, Beatriz
Keywords: Thin Film Solar Cells; Hydrogenated Amorphous Silicon; Bandgap Energy; Ellipsometry; Depth Profiling Analysis; Glow Discharge Optical Emission Spectrometry
Issue date: 2011
Publisher version: http://dx.doi.org/10.3390/ijms12042200
Citation: International Journal of Molecular Sciences, 12(4), p. 2200-2215 (2011); doi:10.3390/ijms12042200
Format extent: p. 2200-2215
Abstract: The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B2H6 and SiH4 fluxes (B2H6 from 12 sccm to 20 sccm and SiH4 from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples.
URI: http://hdl.handle.net/10651/9420
ISSN: 1422-0067
Local identifier: 20110361
Appears in Collections:Química Física y Analítica
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