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Repositorio de la Universidad de Oviedo. > Producción Bibliográfica de UniOvi: RECOPILA > Artículos >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10651/6816

Title: Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry
Author(s): Pisonero Castro, Jorge
Lobo Revilla, Lara
Bordel García, Nerea
Tempez, Agnès
Bensaoula, Abdelhak
Badi, Nacer
Sanz Medel, Alfredo
Keywords: Glow Discharge; Mass Spectrometry; Doped Silicon; Multi-Crystalline and Monocrystalline Silicon; Depth Profile; Boron Mass Content
Issue date: 2010
Publisher version: http://dx.doi.org/10.1016/j.solmat.2010.04.002
Citation: Solar Energy Materials and Solar Cells, 94(8), p. 1352-1357 (2010); doi:10.1016/j.solmat.2010.04.002
Format extent: p. 1352-1357
Abstract: The analytical potential of pulsed radiofrequency glow discharge time-of-flight mass spectrometry (pulsed-rf-GD-TOFMS) is investigated for fast quantitative analysis of major and dopant elements in bulk and thin film layers. This technique does not require sampling at ultra-high vacuum conditions and so it facilitates high sample throughput compared to reference techniques as secondary ionization mass spectrometry (SIMS). In this paper, bulk and boron implanted silicon samples are analyzed. Boron concentration in Si samples is calculated from calibration curves obtained using solar grade silicon and B doped silicon wafers as calibrating materials, and using 29Si+ ion signal as internal standard. Qualitative depth profiles of 10B implanted silicon are determined in a few seconds using the low-pressure pulsed-rf-GD-TOFMS system. Additionally, quantitative depth profiles are easily determined making use of the calibration curves. A good agreement with the depth profiles measured using SIMS was obtained, demonstrating the analytical potential of the pulsed-GD-TOFMS system for fast, sensitive and high depth resolution analysis of implanted silicon samples.
URI: http://hdl.handle.net/10651/6816
ISSN: 0927-0248
Local identifier: 20100511
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