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Characterization of GaN HEMT transistors for DC/DC converters in transportation applications

dc.contributor.authorAl Mdanat, Rand Bassam T. 
dc.contributor.authorGeorgious Zaher Georgious, Ramy 
dc.contributor.authorGarcía García, Jorge 
dc.contributor.authorDonato, Giulio de
dc.contributor.authorCapponi, Fabio Giulii
dc.date.accessioned2021-02-25T09:26:25Z
dc.date.available2021-02-25T09:26:25Z
dc.date.issued2020
dc.identifier.isbn978-1-7281-8959-8
dc.identifier.issn1938-8756
dc.identifier.urihttp://hdl.handle.net/10651/58057
dc.descriptionIEEE Vehicle Power and Propulsion Conference (VPPC) (17th. 2020. Gijón, Spain)spa
dc.description.sponsorshipThis work has been partially funded from the EU H2020 R&I Program under grant agreement 864459 (Project ”TALENT”), and through ERFD Structural Funds. This wok has been partially supported by the Spanish Government, ID&R Office (MEC), under research grants ENE2016-77919 (Project “Conciliator”), and PID2019-111051RB-100 (Project “B2BEnergy”). This work has been partially supported by the government of Principality of Asturias (FICYT), under Grant FC-GRUPIN-IDI/2018/000241 and Severo Ochoa research grant PF-BP19-078.spa
dc.format.extentp. 1-6spa
dc.language.isoengspa
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights© IEEE
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleCharacterization of GaN HEMT transistors for DC/DC converters in transportation applicationsspa
dc.typeconference outputspa
dc.identifier.doi10.1109/VPPC49601.2020.9330991
dc.relation.projectIDinfo:eu‐repo/grantAgreement/EC/H2020/864459spa
dc.relation.projectIDPID2019-111051RB-100spa
dc.relation.projectIDFC-GRUPIN-IDI/2018/000241spa
dc.relation.publisherversionhttps://doi.org/10.1109/VPPC49601.2020.9330991spa
dc.rights.accessRightsopen access
dc.type.hasVersionAM


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