Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications
Fecha de publicación:
2017
Editorial:
IEEE
Versión del editor:
Descripción física:
p. 8099160-
Descripción:
European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) (19th, 2007, Warsaw, Poland)
ISBN:
9789075815276
Patrocinado por:
This work was supported by the European Commission FP7 Large Project under grant UE-14-SPEED- 604057 and by the Spanish Government under projects DPI2014-56358-JIN and the grant FPI BES- 2014-070785.
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