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Please use this identifier to cite or link to this item: http://hdl.handle.net/10651/46678

Title: Self-supplied isolated gate driver for SiC power MOSFETs based on Bi-level modulation scheme
Author(s): García García, Jorge
Gurpinar, E.
Castellazi, A.
García Fernández, Pablo
Issue date: 2017
Publisher version: http://dx.doi.org/10.1109/ECCE.2017.8096859
Format extent: p. 5101-5106
Description: IEEE Energy Conversion Congress and Exposition (9th. 2017. Cincinnati)
URI: http://hdl.handle.net/10651/46678
ISBN: 978-1-5090-2998-3
Sponsored: This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grant ENE2016-77919, Project ”Conciliator” (Innovation Development and Research Office-MEC), and by the European Union through ERFD Structural Funds (FEDER).
Project id.: PRX15/00594
Appears in Collections:Ponencias, Discursos y Conferencias

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