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Please use this identifier to cite or link to this item: http://hdl.handle.net/10651/44075

Title: High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
Author(s): García García, Jorge
Gurpinar, Emre
Castellazzi, Alberto
Issue date: 2017
Publisher version: http://dx.doi.org/10.1109/APEC.2017.7930806
Format extent: p. 919-924
Description: IEEE Annual Applied Power Electronics Conference and Exposition (APEC) (32nd. 2017. Tampa)
URI: http://hdl.handle.net/10651/44075
ISBN: 978-1-5090-5366-7
Sponsored: This work has been partially supported by the Spanish Government, under the research mobility grant PRX15/00594, for professors and researchers in foreign higher education and research institutions (MECD), and under research grants ENE2013-44245-R, Project “Microholo” (Innovation Development and Research Office-MEC,), and by the European Union through ERFD Structural Funds (FEDER).
Project id.: PRX15/00594
ENE2013-44245-R
MINECO/ENE2016-77919-R
FC-GRUPIN-IDI/2018/000241
Appears in Collections:Ponencias, Discursos y Conferencias
Ingeniería Eléctrica, Electrónica, de Computadores y Sistemas
Investigaciones y Documentos OpenAIRE

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