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Repositorio de la Universidad de Oviedo. > Producción Bibliográfica de UniOvi: RECOPILA > Artículos >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10651/10154

Title: Direct chemical in-depth profile analysis and thickness quantification of nanometer multilayers using pulsed-rf-GD-TOFMS
Author(s): Valledor González, Rebeca
Pisonero Castro, Jorge
Bordel García, Nerea
Martín Carbajo, José Ignacio
Quirós Fernández, Carlos
Tempez, Agnès
Sanz Medel, Alfredo
Keywords: Glow Discharge . Mass Spectrometry . Depth Profile Analysis . Nanometer Layers . Useful Yield
Issue date: 2010
Publisher version: http://dx.doi.org/10.1007/s00216-009-3382-8
Citation: Analytical and Bioanalytical Chemistry, 396(8), p. 2881-2887 (2010); doi:10.1007/s00216-009-3382-8
Format extent: p. 2881-2887
Abstract: Nanometer depth resolution is investigated using an innovative pulsed-radiofrequency glow discharge timeof- flight mass spectrometer (pulsed-rf-GD-TOFMS). A series of ultra-thin (in nanometers approximately) Al/Nb bilayers, deposited on Si wafers by dc-magnetron sputtering, is analyzed. An Al layer is first deposited on the Si substrate with controlled and different values of the layer thickness, tAl. Samples with tAl=50, 20, 5, 2, and 1 nm have been prepared. Then, a Nb layer is deposited on top of the Al one, with a thickness tNb=50 nm that is kept constant along the whole series. Qualitative depth profiles of those layered sandwich-type samples are determined using our pulsed-rf-GD-TOFMS set-up, which demonstrated to be able to detect and measure ultra-thin layers (even of 1 nm). Moreover, Gaussian fitting of the internal Al layer depth profile is used here to obtain a calibration curve, allowing thickness estimation of such nanometer layers. In addition, the useful yield (estimation of the number of detected ions per sputtered atom) of the employed pulsed-rf-GD-TOFMS system is evaluated for Al at the selected operating conditions, which are optimized for the in-depth profile analysis with high depth resolution.
URI: http://www.springerlink.com/content/m46g6885h21220x1/fulltext.pdf
http://hdl.handle.net/10651/10154
ISSN: 1618-2642
Local identifier: 20100674
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